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參數(shù)資料
| 型號(hào)： | 2SK3310 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 179K |
| 代理商： | 2SK3310 |
2SK3310
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.48 (typ.)
High forward transfer admittance: |Yfs| = 4.3 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
Enhancement model: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
40
A
Drain power dissipation (Tc
= 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAR
222
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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