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參數(shù)資料
| 型號(hào)： | 2SK3322-AZ |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 91K |
| 代理商： | 2SK3322-AZ |
Data Sheet D14114EJ2V0DS
2
2SK3322
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 2.8 A
1.0
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 2.8 A
1.7
2.2
Input Capacitance
Ciss
VDS = 10 V,
550
pF
Output Capacitance
Coss
VGS = 0 V,
115
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
13
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 2.8 A,
12
Ns
Rise Time
tr
VGS = 10 V,
10
ns
Turn-off Delay Time
td(off)
RG = 10
35
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
VDD = 450 V,
15
nC
Gate to Source Charge
QGS
VGS = 10 V,
4
nC
Gate to Drain Charge
QGD
ID = 5.5 A
4.4
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 5.5 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 5.5 A, VGS = 0 V,
1.6
s
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
5.3
C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
★
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK3322-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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