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參數(shù)資料
| 型號(hào)： | 2SK3325B-S19-AY |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-25, 3 PIN |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大小： | 237K |
| 代理商： | 2SK3325B-S19-AY |
Data Sheet D18429EJ2V0DS
7
2SK3325B
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-263 (MP-25ZK)
4.8 MAX.
1 2 3
10.2 MAX.
8.7 TYP.
3.6±0.2
4
2.8±0.3
1.52±0.2
0.8±0.1
2.54 TYP.
6.3
MIN.
3.0
TYP.
15.9
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.4±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
10.0±0.3
8.0
TYP.
2.54
0.75±0.2
9.15±0.3
2.54±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
No plating
7.88 MIN.
0.025 to
0.25
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Body
Diode
Source (S)
Drain (D)
Gate (G)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3325B-S19-AY | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3325B-ZK-E2-AY | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3325B-ZK-E1-AY | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3326 | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3353-Z-AZ | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3325-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3325-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3325-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) TO-263 Cut Tape |
| 2SK3325-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3326 | 制造商:JVC Worldwide 功能描述:500V 10A 40W Nec Fet TO-220Ab N-Channel |
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