參數(shù)資料
型號: 2SK3325B-S19-AY
元件分類: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, MP-25, 3 PIN
文件頁數(shù): 5/8頁
文件大小: 237K
代理商: 2SK3325B-S19-AY
Data Sheet D18429EJ2V0DS
5
2SK3325B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS
(on)
-
Drain
to
S
ource
O
n-state
Re
si
stanc
e-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
0
50
100
150
ID = 10 A
5.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature -
°C
IF
Diode
Fo
rw
a
rd
Cur
rent
-
A
0.01
0.1
1
10
100
00.5
11.5
Pulsed
0 V
VGS = 10 V
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s,
C
os
s,
C
rs
s
-Cap
acitance
-
pF
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
VGS = 0 V
f = 1 MHz
Crss
Ciss
Coss
VDS - Drain to Source Voltage – V
t
d(o
n)
,t
r,
t
d(of
f),
t
f-
Switching
Time
-
ns
1
10
100
1000
0.1
1
10
100
VDD = 150 V
VGS = 10 V
RG = 10
Ω
td(off)
tf
tr
td(on)
ID - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
trr
R
eve
rs
eR
ecovery
Time
-ns
10
100
1000
0.1
1
10
100
di/dt = 50 A/
μs
VGS = 0 V
ID - Drain Current - A
V
DS
Drain
to
S
o
urce
Voltage
-
V
0
100
200
300
400
500
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10
VDS
VGS
250 V
VDD = 400 V
100 V
ID = 10 A
QG – Gate Chage - nC
V
GS
Gate
to
Source
Voltage
-
V
<R>
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3325-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3325-Z(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SK3325-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) TO-263 Cut Tape
2SK3325-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3326 制造商:JVC Worldwide 功能描述:500V 10A 40W Nec Fet TO-220Ab N-Channel