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參數(shù)資料
| 型號(hào)： | 2SK3352 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | P- Channel Silicon MOS FET DC-DC Converter |
| 中文描述： | P溝道場(chǎng)效應(yīng)晶體管芯片的DC - DC轉(zhuǎn)換器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | 2SK3352 |
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990915TM2fXHD
Absolute Maximum Ratings / Ta=25
°
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25
°
C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Marking : K3352
TENTATIVE
Features and Applications
Low ON-state resistance.
Very high - speed switching.
4V drive.
2SK3352
P- Channel Silicon MOS FET
DC-DC Converter
V
V
A
A
W
W
°
C
°
C
min typ max unit
30
1.0
19
1
±
10
2.4
15
21
1.2
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
27
11
15
1400
420
210
14
530
100
150
28
4.6
5
1.0
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW
≤
10
μ
s, duty cycle
≤
1%
Tc=25
°
C
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=
±
16V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=20A
ID=20A , VGS=10V
ID=10A , VGS=4.5V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V, VGS=10V, ID=20A
IS=45A , VGS= 0
unit
30
±
20
45
80
1.65
40
150
--55 to +150
1 : Gate
2 : Drain
3 : Source
4 : Drain
Package Dimensions
See specified Test Circuit
30
°
30
°
10.2
2
1
9
0.8
1
1.2
0
1
8
4.5
1.3
0.4
2.55
2.55
2
1
2
3
4
4
4
SMP-FA (unit : mm)
SMP-FD (unit : mm)
1 : Gate
2 : Drain
3 : Source
4 : Drain
1 : Gate
2 : Drain
3 : Source
4 : Drain
10.2
4.5
1.3
1.2
0.8
1 2 3
0.4
9
0
8
2
2
1
4
2.55
2.55
2
SMP(unit:mm)
10.2
1.2
2.55
2.55
2.55
2.55
4.5
0to0.3
0.4
1.3
9
3
2
1
8
1
1
0
0.8
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3353 | Switching N-channel power MOS FET industrial use |
| 2SK3353-S | Switching N-channel power MOS FET industrial use |
| 2SK3353-Z | Switching N-channel power MOS FET industrial use |
| 2SK3354-S | Switching N-channel power MOS FET industrial use |
| 2SK3354-Z | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3352_05 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK3352-DL-E | 制造商:SANYO 功能描述:Nch 30V 45A 0.015 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH30V45ASOT404 制造商:Sanyo 功能描述:0 |
| 2SK3353 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3353-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 82A 9.5m@10V TO220AB Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 82A 3-Pin(3+Tab) TO-220AB Cut Tape |
| 2SK3353-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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