參數(shù)資料
型號(hào): 2SK3365
元件分類: 小信號(hào)晶體管
英文描述: 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
封裝: TO-251, MP-3, 3 PIN
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 226K
代理商: 2SK3365
Data Sheet D14255EJ4V0DS
2
2SK3365
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 15 A
11.5
14
m
Ω
RDS(on)2
VGS = 4.5 V, ID = 15 A
15.2
21
m
Ω
RDS(on)3
VGS = 4.0 V, ID = 15 A
18
29
m
Ω
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 15 A
8.0
16.0
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
Gate to Source Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1300
pF
Output Capacitance
Coss
405
pF
Reverse Transfer Capacitance
Crss
190
pF
Turn-on Delay Time
td(on)
ID = 15 A, VGS = 10 V, VDD = 15 V,
37
ns
Rise Time
tr
RG = 10
Ω
500
ns
Turn-off Delay Time
td(off)
75
ns
Fall Time
tf
95
ns
Total Gate Charge
QG
ID = 30 A, VDD = 24 V, VGS = 10 V
25
nC
Gate to Source Charge
QGS
4.5
nC
Gate to Drain Charge
QGD
7.0
nC
Body Diode forward Voltage
VF(S-D)
IF = 30 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V
35
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
32
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3365-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251
2SK3365-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3365-Z(AZ) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK3365-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 Cut Tape
2SK3366 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR