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參數(shù)資料
| 型號(hào)： | 2SK3367-AZ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | 2SK3367-AZ |
Data Sheet D14257EJ3V0DS
5
2SK3367
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
20
10
2
4
6
8
12
14
16
18
0
50
100
150
ID = 10 A
10 V
4.5 V
VGS = 4.0 V
1.0
1.2
ISD
-
Diode
Forward
Current
-
A
0
1.6
1.4
VSD - Source to Drain Voltage - V
0.2
0.4
0.6
0.8
Pulsed
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.01
0.1
1
10
100
1000
VGS = 10 V
4.5 V
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
10000
110
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.01
0.1
10
100
10000
1000
1
10
100
VDD = 15 V
VGS = 10 V
RG = 10
tr
tf
td(off)
td(on)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Diode Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
s
VGS = 0 V
1
0.1
10
110
100
1000
100
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
40
80
10
20
30
40
2
4
6
8
0
VDD = 24 V
15 V
6 V
VDS
12
14
10
ID = 36 A
VGS
20
60
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3367-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3367-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 |
| 2SK3367-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 36A 9m@10V TO252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 T/R |
| 2SK3371 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3371(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold Bulk |
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