參數(shù)資料
型號: 2SK3367-Z
廠商: NEC Corp.
英文描述: RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO
中文描述: 開關N溝道功率場效應晶體管工業(yè)用
文件頁數(shù): 1/8頁
文件大?。?/td> 83K
代理商: 2SK3367-Z
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1999
MOS FIELD EFFECT TRANSISTOR
2SK3367
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14257EJ1V0DS00 (1st edition)
October 1999 NS CP(K)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3367
TO-251
2SK3367-Z
TO-252
DESCRIPTION
The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
Low on-resistance
R
DS(on)1
= 9.0 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 12.0 m
MAX. (V
GS
= 4.5 V, I
D
= 18 A)
R
DS(on)3
= 14.0 m
MAX. (V
GS
= 4.0 V, I
D
= 18 A)
Low C
iss
: C
iss
= 2800 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note
I
D(DC)
±36
A
I
D(pulse)
±144
A
Total Power Dissipation (T
C
= 25 °C)
P
T
40
W
Total Power Dissipation (T
A
= 25 °C)
P
T
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Note
PW
10
μ
s, Duty cycle
1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
R
th(ch-C)
R
th(ch-A)
3.13
125
°C/W
°C/W
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