參數(shù)資料
型號(hào)： 2SK3376MFV
元件分類： 小信號(hào)晶體管
英文描述： N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝： 2-1L1C, VESM, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 152K
代理商： 2SK3376MFV
2SK3376MFV
2007-11-01
2
Electrical Characteristics (A-Rank IDSS Ta=25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain Current
IDSS
VDS = 2 V, VGS = 0
80
200
A
Drain Current
ID
VDD = 2 V, RL= 2kΩ,Cg = 3pF
240
A
Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1μA
-0.1
-0.8
V
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
5.5
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-13.5
-9.0
dB
Delta Voltage Gain
DGv(f)
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
-2.0
dB
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
-4.0
dB
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
47
mV
Electrical Characteristics (B-Rank IDSS Ta=25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain Current
IDSS
VDS = 2 V, VGS = 0
170
300
A
Drain Current
ID
VDD = 2 V, RL= 2kΩ,Cg = 3pF
340
A
Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1μA
-0.15
-1.0
V
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
5.5
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-11.5
-8.0
dB
Delta Voltage Gain
DGv(f)
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
-2.0
dB
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
-7.0
dB
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
50
mV
Electrical Characteristics (C-Rank IDSS Ta=25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain Current
IDSS
VDS = 2 V, VGS = 0
270
480
A
Drain Current
ID
VDD = 2 V, RL= 2kΩ,Cg = 3pF
520
A
Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1μA
-0.2
-1.2
V
Forward transfer admittance
|Yfs|
VDS = 2 V,VGS = 0V
0.7
1.4
mS
Input capacitance
Ciss
VDS = 2 V, VGS = 0, f = 1 MHz
5.5
pF
Voltage Gain
Gv
VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz
-10.5
-6.75
dB
Delta Voltage Gain
DGv(f)
VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz
-2.0
dB
Delta Voltage Gain
DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz
-20
dB
Noise Voltage
VN
VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve
Filter
75
mV
相關(guān)PDF資料
PDF描述
2SK3376MFV-BK 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK3377-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,20A,35m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251
2SK3377-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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