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參數(shù)資料
| 型號(hào)： | 2SK3396 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SSSMINI3-F1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 2SK3396 |
Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
1
Publication date: July 2003
SJF00036AED
For impedance conversion in low frequency
For infrared sensor
■
Features
Low gate-source cutoff current I
GSS
Small capacitance of short-circuit forward transfer capacitance
(common source) C
iss
, short-circuit output capacitance (common
source) C
oss
, reverse transfer capacitance (common source) C
rss
■
Absolute Maximum Ratings
T
a
=
25
°
C
1: Source
2: Drain
3: Gate
SSSMini3-F1 Package
Unit: mm
Parameter
Symbol
Rating
Unit
Gate-drain voltage (Source open)
V
GDO
40
40
V
Gate-source voltage (Drain open)
V
GSO
V
Gate current
I
G
I
D
10
mA
Drain current
1
mA
Power dissipation
P
D
100
mW
Channel temperature
T
ch
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
V
GDS
I
G
=
10
μ
A, V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
=
20 V, V
DS
=
0
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, I
D
=
1
μ
A
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
40
V
Drain-source cutoff current
I
DSS
I
GSS
Y
fs
30
200
μ
A
Gate-source cutoff current
0.5
nA
Forward transfer admittance
0.05
mS
Gate-source cutoff voltage
V
GSC
C
iss
1.3
1.0
3.0
V
Short-circuit forward transfer capacitance
(Common source)
pF
Short-circuit output capacitance
(Common source)
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
0.4
pF
Reverse transfer capacitance
(Common source)
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
0.4
pF
1
±
0
0
±
0
0
0
5
°
0
0
±
0
0
0.33
(0.40)
(0.40)
0.80
±
0.05
1.20
±
0.05
1
2
3
5
°
+0.05
0.10
+0.05
0.23
+0.05
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: EB
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