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參數(shù)資料
| 型號： | 2SK3408-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 48 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK3408-A |
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2000
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D15016EJ3V0DS00 (3rd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
Can be driven by a 4-V power source
Low on-state resistance
RDS(on)1 = 195 m
MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 250 m
MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 m
MAX. (VGS = 4.0 V, ID = 0.5 A)
Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3408
SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
43
±5V
Drain to Gate Voltage (VGS = 0 V)
VDGS
43
±5V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±1.0
A
Drain Current (pulse)
Note1
ID(pulse)
±4.0
A
Total Power Dissipation (TC = 25°C)
PT1
0.2
W
Total Power Dissipation (TA = 25°C)
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t
≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8
±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –
0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XF
Gate
Drain
The mark 5 shows major revised points.
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PDF描述 |
|---|---|
| 2SK3417(2-10S1B) | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3417(2-10S2B) | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3441 | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3461(S) | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3461STL-E | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3408-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3408-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,43V,1.0A,0.155ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R |
| 2SK3411 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SK3412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SK3413LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
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