參數(shù)資料
型號: 2SK3420
元件分類: JFETs
英文描述: 85 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/10頁
文件大小: 49K
代理商: 2SK3420
2SK3420
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltage drain current
I
DSS
——
10
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
DS = 10 V, ID = 1 mA
Note 1
Forward transfer admittance
|y
fs|55
90
S
I
D = 45 A, VDS = 10 V
Note 1
Static drain to source on state
R
DS(on)
3.2
3.9
m
I
D = 45 A, VGS = 10 V
Note 1
resistance
R
DS(on)
4.8
7.5
m
I
D = 45 A, VGS = 4 V
Note 1
Input capacitance
Ciss
9500
pF
V
DS = 10 V
Output capacitance
Coss
2250
pF
V
GS = 0
Reverse transfer capacitance
Crss
1000
pF
f = 1 MHz
Total gate charge
Qg
190
nc
V
DD = 20 V
Gate to source charge
Qgs
24
nc
V
GS = 10 V
Gate to drain charge
Qgd
45
nc
I
D = 85 A
Turn-on delay time
td(on)
80
ns
V
GS = 10 V
Rise time
tr
410
ns
I
D = 45 A
Turn-off delay time
td(off)
590
ns
R
L = 0.22
Fall time
tf
340
ns
Body-drain diode forward
voltage
V
DF
1.0
V
I
F = 85 A, VGS = 0
Body-drain diode reverse
recovery time
trr
90
ns
I
F = 85 A, VGS = 0
diF/dt = 50 A/
s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK3421(S) 85 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3421(L) 85 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3424-ZK 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3424 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3431-S 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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