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參數(shù)資料
| 型號(hào)： | 2SK3424 |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 196K |
| 代理商： | 2SK3424 |
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3424
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14640EJ2V0DS00 (2nd edition)
Date Published
May 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3424 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 11.5 m
MAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
Drain Current (Pulse)
Note
ID(pulse)
±192
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10
s, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3424
TO-220AB
2SK3424-ZK
TO-263(MP-25ZK)
2SK3424-ZJ
TO-263(MP-25ZJ)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3431-S | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3431-Z-AZ | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-Z | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3434-Z-AZ | 48 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3434-S | 48 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3424-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 48A 3-Pin(3+Tab) TO-220AB Bulk |
| 2SK3424-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3424-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3426 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK34260TL | 功能描述:JFET N-CH 20V 2MA SSSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
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