參數(shù)資料
型號: 2SK3434-ZJ-AZ
元件分類: JFETs
英文描述: 48 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: MP-25ZJ, 3 PIN
文件頁數(shù): 7/8頁
文件大小: 79K
代理商: 2SK3434-ZJ-AZ
Data Sheet D14603EJ3V0DS
7
2SK3434
PACKAGE DRAWINGS (Unit: mm)
1)
TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3)
TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
4) TO-220SMD (MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TY
P.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
Note This package is produced only in Japan.
相關(guān)PDF資料
PDF描述
2SK3434-AZ 48 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3435-ZJ 80 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3435-AZ 80 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3435-Z 80 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3435-S-AZ 80 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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