參數(shù)資料
型號: 2SK3440
元件分類: JFETs
英文描述: 50 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-9F1B, SC-97, 4 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 198K
代理商: 2SK3440
2SK3440
2004-07-06
2
Electrical Characteristics (Note 4) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
6.5
8
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
15
30
S
Input capacitance
Ciss
3700
pF
Reverse transfer capacitance
Crss
280
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1320
pF
Rise time
tr
12
Turn-on time
ton
30
Fall time
tf
12
Switching time
Turn-off time
toff
VIN:
Duty <= 1%, tw = 10 s
50
ns
Total gate charge
(gate-source plus gate-drain)
Qg
55
nC
Gate-source charge
Qgs
35
nC
Gate-drain (“miller”) charge
Qgd
VDD 48 V, VGS = 10 V, ID = 50 A
20
nC
Note 4: Connect the S1 and S2 pins together, and ground them except during switchin time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1
50
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1
200
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2
1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2
4
A
Forward voltage (diode)
VDS2F
IDR = 50 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
70
ns
Reverse recovery charge
Qrr
IDR = 50 A, VGS = 0 V,
dIDR/dt = 100 A/s
123
nC
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
R
L
=1.
2
VDD 30 V
0 V
VGS
10 V
4.
7
ID = 25 A
VOUT
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