參數(shù)資料
型號: 2SK3441
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
中文描述: 東芝場效應晶體管硅?頻道馬鞍山型(U型MOSII)
文件頁數(shù): 4/6頁
文件大?。?/td> 233K
代理商: 2SK3441
2SK3441
2002-02-06
4
D
D
G
t
Case temperature Tc (°C)
R
DS (ON)
– Tc
D
R
D
(
)
Drain-source voltage V
DS
(V)
I
DR
– V
DS
D
D
Drain-source voltage V
DS
(V)
Capacitance – V
DS
C
Case temperature Tc (°C)
V
th
– Tc
Case temperature Tc (°C)
P
D
– Tc
G
G
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
D
40
0
40
80
120
160
80
Common source
Pulse test
6
2
0
ID 70 A
35
4
10
8
12
15
ID 15, 35, 70 A
VGS 4 V
VGS 10 V
0
1
0.4
3
10
100
300
0.8
1.2
2.0
Common source
Tc 25°C
Pulse test
VGS 0, 1 V
10
3
5
5
30
50
1.6
0
2
3
4
5
80
40
0
40
120
160
80
1
Common source
VDS 10 V
ID 1 mA
Pulse test
200
120
10
0
40
80
120
160
40
80
160
200
0
5
10
20
25
15
0
10
30
40
50
20
24
Common source
ID 75 A
Tc 25°C
Pulse test
0
160
320
80
240
400
VDS
VDD 48 V
12
VGS
0.1
300
500
1000
100000
1
10
100
Common source
VGS 0 V
f 1 MHz
Tc 25°C
Ciss
Coss
Crss
3000
5000
10000
30000
50000
0.3 0.5
3
5
30 50
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