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參數(shù)資料
| 型號： | 2SK3447 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK3447 |
2SK3461(L), 2SK3461(S)
4
Main Characteristics
160
120
80
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
PW
=
10
ms
(1
shot)
3 V
40
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
V
= 10 V
GS
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Operation in
this area is
limited by RDS(on)
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
V
= 10 V
DS
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK72 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK723 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-247 |
| 2SK725A | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK902A | TRANSISTOR | MOSFET | N-CHANNEL | 270V V(BR)DSS | 30A I(D) | TO-247 |
| 2SK903MR | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-220 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3447TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| 2SK3448 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Use |
| 2SK3449 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH60V4.8ATO-126 |
| 2SK345 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3450-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD MOSFET |
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