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參數(shù)資料
| 型號(hào)： | 2SK3447 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2SK3447 |
2SK3447
Rev.5, Dec. 2002, page 3 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
150
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16V, VDS = 0
Zero gate voltage drain current
I
DSS
—
1
A
V
DS = 150 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
DS = 10V, I D = 1mA
Static drain to source on state
R
DS(on)
—
1.5
1.95
I
D = 0.5 A, VGS = 10V
Note3
resistance
R
DS(on)
—
1.9
2.5
I
D = 0.5 A, VGS = 4V
Note3
Forward transfer admittance
|y
fs|
0.5
0.9
—
S
I
D = 0.5 A, VDS = 10V
Note3
Input capacitance
Ciss
—
85
—
pF
V
DS = 10V
Output capacitance
Coss
—
36
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
18
—
pF
f = 1MHz
Total gate charge
Qg
—
4.5
—
nC
V
DD = 100V
Gate to source charge
Qgs
—
0.8
—
nC
V
GS = 10V
Gate to drain charge
Qgd
—
1.6
—
nC
I
D = 1 A
Turn-on delay time
t
d(on)
—
7
—
ns
V
GS = 10V, ID = 0.5A
Rise time
t
r
—
6
—
ns
R
L = 60
Turn-off delay time
t
d(off)
—
21
—
ns
Fall time
t
f
—
10
—
ns
Body–drain diode forward voltage
V
DF
—
1.0
1.5
V
IF = 1 A, V
GS = 0
Note3
Body–drain diode reverse recovery
time
t
rr
—
60
—
ns
IF = 1 A, V
GS = 0
diF/ dt =100A/s
Notes: 3. Pulse test
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| 2SK3447TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| 2SK3448 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Use |
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| 2SK345 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
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