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參數(shù)資料
| 型號(hào)： | 2SK3448 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | NMP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK3448 |
2SK3448
No.6785-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Meets radial taping.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6785
2SK3448
Package Dimensions
unit : mm
2087A
[2SK3448]
N1500 TS IM TA-2921
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Use
1 : Source
2 : Drain
3 : Gate
SANYO : NMP
6.9
0.6
0.5
4.5
1.0
0.9
2.5
1.45
1.0
0.45
4.0
1.0
2.54
123
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
2.5
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
10
A
Allowable Power Dissipation
PD
1W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1.5A
2.7
3.8
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=1.5A, VGS=10V
115
150
m
RDS(on)2
ID=1.0A, VGS=4V
150
210
m
Continued on next page.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3449 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH60V4.8ATO-126 |
| 2SK345 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3450-01 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:STD MOSFET |
| 2SK3450-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3451-01 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
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