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參數(shù)資料
| 型號： | 2SK3456-ZJ-AZ |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, 3 PIN |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 199K |
| 代理商： | 2SK3456-ZJ-AZ |
Data Sheet D14753EJ1V0DS
7
2SK3456
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3456-S | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3456-ZJ | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3456-S | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3458-ZJ | 6 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3458-ZJ-AZ | 6 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3457 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3458 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3458-AZ | 制造商:Renesas Electronics 功能描述:Nch 800V 6A 2200m@10V TO220AB Bulk |
| 2SK3458-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3458-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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