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參數(shù)資料
| 型號： | 2SK3458-ZJ-AZ |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK3458-ZJ-AZ |
Preliminary Product Information D14755EJ1V0PM00
2
2SK3458
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 800 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 3.0 A
2.5
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 3.0 A
1.8
2.2
Input Capacitance
Ciss
VDS = 10 V
990
pF
Output Capacitance
Coss
VGS = 0 V
170
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
ID = 3.0 A
16
ns
Rise Time
tr
VGS(on) = 10 V
17
ns
Turn-off Delay Time
td(off)
VDD = 150 V
52
ns
Fall Time
tf
RG = 10
18
ns
Total Gate Charge
QG
ID = 6.0 A
21
nC
Gate to Source Charge
QGS
VDD = 450 V
5.5
nC
Gate to Drain Charge
QGD
VGS = 10 V
12
nC
Diode Forward Voltage
VF(S-D)
IF = 6.0 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
630
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
3.4
C
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
VGS(on)
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3458-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK346 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3460 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET |
| 2SK3462 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC/DC Converter and Motor Drive Applications |
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