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參數(shù)資料
| 型號(hào)： | 2SK3473 |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | 2SK3473 |
2SK3473
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
ID = ±10 μA, VGS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
1.3
1.6
Ω
Forward transfer admittance
Yfs
VDS = 15 V, ID = 4 A
3.0
6.5
S
Input capacitance
Ciss
1450
Reverse transfer capacitance
Crss
30
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
155
pF
Rise time
tr
30
Turn-on time
ton
55
Fall time
tf
12
Switching time
Turn-off time
toff
75
ns
Total gate charge
Qg
38
Gate-source charge
Qgs
22
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 9 A
16
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
9
A
Pulse drain reverse current
(Note 1)
IDRP
27
A
Forward voltage (diode)
VDSF
IDR = 9 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1350
ns
Reverse recovery charge
Qrr
IDR = 9 A, VGS = 0 V,
dIDR/dt = 100 A/μs
15
μC
Marking
RL =
100
Ω
0 V
10 V
VGS
VDD 400 V
ID = 4 A
VOUT
4.7
Ω
Duty
≤ 1%, tw = 10 μs
K3473
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3473(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.6@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
| 2SK3473_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3473_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3474-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD MOSFET |
| 2SK3475 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
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