參數(shù)資料
型號: 2SK3484-Z-AZ
元件分類: 小信號晶體管
英文描述: 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封裝: TO-252, MP-3Z, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 144K
代理商: 2SK3484-Z-AZ
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MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15069EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 125 m
MAX. (VGS = 10 V, ID = 8 A)
RDS(on)2 = 148 m
MAX. (VGS = 4.5 V, ID = 8 A)
Low Ciss: Ciss = 900 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±16
A
Drain Current (pulse)
Note1
ID(pulse)
±22
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
10
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 , VGS = 20
→ 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
4.17
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3484
TO-251 (MP-3)
2SK3484-Z
TO-252 (MP-3Z)
相關PDF資料
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2SK3484 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
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相關代理商/技術參數(shù)
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