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參數(shù)資料
| 型號： | 2SK3491TP-FA |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 29K |
| 代理商： | 2SK3491TP-FA |
2SK3491
No.6959-2/4
PW=1
s
D.C.
≤0.5%
P.G
RGS
50
G
S
ID=0.5A
RL=400
VDD=200V
VIN
VOUT
D
2SK3491
10V
0V
VIN
ID -- VGS
Drain
Current,
I
D
-
A
Gate-to-Source Voltage, VGS -- V
ID -- VDS
Drain
Current,
I
D
-
A
Drain-to-Source Voltage, VDS -- V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
0
IT02865
IT02866
VDS=10V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
5
10
15
20
Tc= --25
°C
25
°C
75
°C
VGS=4.5V
5.0V
5.5V
6.0V
20.0V
10.0V
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
1.0
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
4.0
A
Allowable Power Dissipation
PD
1.0
W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0
100
A
Gate-to-Sourse Leakage Current
IGSS
VGS=±30V, VDS=0
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.5A
430
850
mS
Static Drain-to-Source On-State Resistance
RDS(on)
VDS=10V, ID=0.5A
8.5
11
Input Capacitance
Ciss
VDS=20V, f=1MHz
135
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
20
pF
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=1.0A
6
nC
Turn-ON Delay Time
td(on)
See specified Test Circuit
8
ns
Rise Time
tr
See specified Test Circuit
7
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
17
ns
Fall Time
tf
See specified Test Circuit
30
ns
Diode Forward Voltage
VSD
IS=1.0A, VGS=0
0.83
1.2
V
Marking : K3491
Switching Time Test Circuit
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