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參數(shù)資料
| 型號(hào)： | 2SK349 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 10A條（丁）|對(duì)247VAR |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK349 |
2SK3461(L), 2SK3461(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Zero gate voltage drain current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
DS = 10 V, ID = 1 mA
Note 1
Forward transfer admittance
|y
fs|55
90
—
S
I
D = 45 A, VDS = 10 V
Note 1
Static drain to source on state
R
DS(on)
—
4.3
5.5
m
I
D = 45 A, VGS = 10 V
Note 1
resistance
R
DS(on)
—
6.0
9.0
m
I
D = 45 A, VGS = 4 V
Note 1
Input capacitance
Ciss
—
9770
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1340
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
470
—
pF
f = 1 MHz
Total gate charge
Qg
—
180
—
nc
V
DD = 50 V
Gate to source charge
Qgs
—
32
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
36
—
nc
I
D = 85 A
Turn-on delay time
td(on)
—
53
—
ns
V
GS = 10 V
Rise time
tr
—
320
—
ns
I
D = 45 A
Turn-off delay time
td(off)
—
700
—
ns
R
L = 0.67
Fall time
tf
—
380
—
ns
Body-drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 85 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
70
—
ns
I
F = 85 A, VGS = 0
diF/dt = 50 A/
s
Note:
1. Pulse test
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