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參數(shù)資料
| 型號： | 2SK3503 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-75, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 51K |
| 代理商： | 2SK3503 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
D15395EJ1V0DS00 (1st edition)
Date Published
March 2001 NS CP(K)
Printed in Japan
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it
can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Automatic mounting supported
Gate can be driven by a 1.5 V power source
Because of its high input impedance, there’s no need to
consider a drive current
Since bias resistance can be omitted, the number of
components required can be reduced
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3503
Note
SC-75 (USM)
Note Marking: E1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC) (Tc = 25°C)
ID(DC)
±0.1
A
Drain Current (pulse)
Note1
ID(pulse)
±0.4
A
Total Power Dissipation (TC = 25°C)
Note2
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 3.0 cm2
× 0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
1.6
±
0.1
0.8
±
0.1
0.5
G
S
D
1.0
1.6 ± 0.1
0.2
+0.1
–0
0.5
0.3 ± 0.05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3503 | 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3505-01MR | 16 A, 500 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3507-ZK | 22 A, 30 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 2SK3510-Z | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3510-S-AZ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3503-T1-A | 制造商:Renesas Electronics 功能描述:Nch 16V 100mA 12 SC75 Cut Tape |
| 2SK3504-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.35Ohm;ID +/-16A;TO-220AB;PD 225W;VGS +/-3 |
| 2SK3504-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3505 | 制造商:Distributed By MCM 功能描述:500V 16A 80W Gds Fuji Fet TO-220Ab N-Channel |
| 2SK3505-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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