參數(shù)資料
型號: 2SK3507
元件分類: 小信號晶體管
英文描述: 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封裝: TO-251, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 59K
代理商: 2SK3507
Preliminary Product Information D15387EJ1V0PM
2
2SK3507
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±16 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 11 A
2.5
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 11 A
40
50
m
RDS(on)2
VGS = 4.5 V, ID = 11 A
55
73
m
Input Capacitance
Ciss
VDS = 10 V
250
pF
Output Capacitance
Coss
VGS = 0 V
100
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
50
pF
Turn-on Delay Time
td(on)
VDD = 15 V , ID = 11 A
18
ns
Rise Time
tr
VGS(on) = 10 V
8
ns
Turn-off Delay Time
td(off)
RG = 10
48
ns
Fall Time
tf
10
ns
Total Gate Charge
QG
VDD = 24 V
8
nC
Gate to Source Charge
QGS
VGS = 10 V
2
nC
Gate to Drain Charge
QGD
ID = 22 A
3
nC
Body Diode Forward Voltage
VF(S-D)
IF = 22 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 22 A, VGS = 0 V
8.7
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
7.8
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS(on)
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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