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參數(shù)資料
| 型號： | 2SK3510-Z |
| 元件分類： | JFETs |
| 英文描述： | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-25Z, TO-220SMD, 3 PIN |
| 文件頁數(shù)： | 8/10頁 |
| 文件大小： | 217K |
| 代理商： | 2SK3510-Z |
Data Sheet D15687EJ1V0DS
5
2SK3510
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-100
-5 0
0
50
100
150
200
V GS = 10 V
ID = 42 A
Pu ls e d
C
is
s,
C
os
s,
C
rs
s-
Capac
itanc
e
-
pF
10 0
10 00
10 000
10 000 0
0. 1
1
10
10 0
C is s
C rs s
C os s
V GS = 0 V
f = 1 M H z
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
Tch - Channel Temperature -
°CVDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(
on)
,t
r,
t
d(
of
f),
t
f-
S
w
itc
h
ing
Ti
m
e
-
ns
1
10
100
1000
0.1
1
10
100
VDD = 38 V
VGS = 10 V
RG = 0
td(on)
td(off)
tf
tr
ID - Drain Current - A
V
DS
-
Drai
n
t
o
S
ourc
e
V
o
lt
age
-
V
0
10
20
30
40
50
60
70
80
0
5 0
1 00
1 5 0
2 00
0
2
4
6
8
10
12
14
16
ID = 8 3 A
V DD = 6 0 V
V DD = 1 5 V
V DD = 3 8 V
V GS
V DS
QG - Gate Charge - nC
V
GS
-
Gat
e
t
o
S
ourc
e
V
o
lt
age
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
ISD
-
Di
ode
Forw
ard
Current
-
A
0.0 1
0.1
1
10
10 0
10 00
0
0 .2 0 .4 0 .6 0 .8
1
1 .2 1 .4 1 .6 1 .8
2
V GS = 0 V
V GS = 1 0 V
Pu ls e d
trr
-
Revers
e
Rec
o
very
T
im
e
-
ns
10
100
0. 1
1
10
100
V GS = 0 V
di/ d t = 10 0 A /
s
VSD - Source to Drain Voltage - V
IF - Drain Current - A
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3510-S-AZ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3510-AZ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3510-ZJ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3510-S | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3510-Z-AZ | 83 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3514-01SC | 制造商:Fuji Electric 功能描述: |
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