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參數(shù)資料
| 型號(hào)： | 2SK3516-01L |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | MOSFET的性病的LQG |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 113K |
| 代理商： | 2SK3516-01L |
3
2SK3502-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=10A, Tch=25°C
IF=f(VSD):80μs Pulse test,Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
typ.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
V
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
0
10
1
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
480V
300V
Vcc= 120V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3516-01S | STD MOSFET |
| 2SK3517-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3518-01MR | STD MOSFET |
| 2SK3526-01L | STD MOSFET |
| 2SK3526-01S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3516-01LZSC | 制造商:Fuji Electric 功能描述: |
| 2SK3517-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.15 Ohms;ID +/-6A;TO-220AB;PD 90W;VGS +/-3 |
| 2SK3517-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01R | 制造商:Fuji Electric 功能描述:MOSFET, Standard; N-Channel; 600 V; 16 A (Max.); 64 A (Max.) |
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