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參數(shù)資料
| 型號： | 2SK3557 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Low-Noise HF Amplifier Applications |
| 中文描述： | 低噪聲放大器應(yīng)用高頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 34K |
| 代理商： | 2SK3557 |
2SK3557
No.7169-1/4
Applications
AM tuner RF amplifier.
Low noise amplifier.
Features
Large
yfs
.
Small Ciss.
Ultrasmall-sized package permitting 2SK3557-
applied sets to be made smaller and slimer.
Ultralow noise figure.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7169
2SK3557
Package Dimensions
unit : mm
2050A
[2SK3557]
N-Channel Junction Silicon FET
Low-Noise HF Amplifier Applications
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
V
V
mA
mA
mW
°
C
°
C
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
15
--15
10
50
200
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Marking : IR
V(BR)GDS
IGSS
VGS(off)
IG=--10
μ
A, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100
μ
A
--15
V
nA
V
--1.0
--1.5
--0.3
--0.7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
60502 TS IM TA-3622
Preliminary
1 : Source
2 : Drain
3 : Gate
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
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| 2SK3557-6-TB-E | 功能描述:射頻JFET晶體管 LOW-FREQUENCY AMPLIFIER RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2SK3557-7-TB-E | 功能描述:MOSFET LOW-FREQUENCY AMPLIFIER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561 | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q) | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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