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參數(shù)資料
| 型號： | 2SK3570-Z |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-25Z, TO-220SMD, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK3570-Z |
Data Sheet D16256EJ2V0DS
5
2SK3570
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
5
10
15
20
-5 0
0
50
10 0
1 5 0
ID = 2 4 A
Pu ls e d
V GS = 4 .5 V
10 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rs
s-
Ca
pac
ita
n
c
e
-
p
F
10
100
1000
1000 0
0. 01
0. 1
1
10
100
V GS = 0 V
f = 1 M H z
C is s
C os s
C rs s
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(
o
n
),
t
r,
t
d
(o
ff)
,t
f-
S
w
itc
h
in
g
Tim
e
-n
s
1
10
10 0
0.1
1
10
10 0
td(on)
td(off)
tf
tr
V DD = 10 V
V GS = 10 V
R G = 10
ID - Drain Current - A
V
DS
-
Drai
n
t
o
S
ourc
e
V
o
lt
age
-
V
0
4
8
12
16
20
0
5
10
15
20
25
0
2
4
6
8
10
ID = 48 A
V DS
V GS
V DD = 16 V
10 V
QG - Gate Change - nC
V
GS
-
Ga
te
t
o
S
our
c
e
V
o
lt
age
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF
-
D
io
de
Fo
rw
a
rd
C
u
rr
ent
-
A
0.01
0.1
1
10
100
100 0
00 .511 .5
V GS = 1 0 V
0 V
Pu ls e d
VF(S-D) - Source to Drain Voltage - V
trr
-
Rev
e
rs
e
Re
cov
e
ry
T
im
e
-n
s
1
10
10 0
10 00
0.1
1
10
10 0
di/ d t = 100 A /
s
V GS = 0 V
ID - Drain Current - A
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| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
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| 2SK3571-ZK-AZ | 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3570-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
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| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
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