參數(shù)資料
型號(hào): 2SK3572-S
元件分類: JFETs
英文描述: 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: FIN CUT, MP-25, 3 PIN
文件頁(yè)數(shù): 9/10頁(yè)
文件大?。?/td> 209K
代理商: 2SK3572-S
Data Sheet D16258EJ2V0DS
6
2SK3572
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZK)
4) TO-220SMD (MP-25Z)
Note
10.0±0.2
8.0
TYP.
2.54
0.7±0.15
9.15±0.2
2.45±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8o
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
相關(guān)PDF資料
PDF描述
2SK3573 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3573-ZK-AZ 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3573-S 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3573-ZK 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3582TK-B 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
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