參數資料
型號: 2SK3573
元件分類: JFETs
英文描述: 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-25, 3 PIN
文件頁數: 1/8頁
文件大小: 77K
代理商: 2SK3573
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MOS FIELD EFFECT TRANSISTOR
2SK3573
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16259EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 4.0 m
MAX. (VGS = 10 V, ID = 42 A)
Low gate charge
QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note
ID(pulse)
±332
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
105
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW
≤ 10
s, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3573
TO-220AB
2SK3573-S
TO-262
2SK3573-ZK
TO-263
2SK3573-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
相關PDF資料
PDF描述
2SK3573-S 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3573 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3574 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3574-Z 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3577 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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