參數(shù)資料
型號(hào): 2SK3582MFV-B
元件分類: 小信號(hào)晶體管
英文描述: 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: 2-1L1C, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 319K
代理商: 2SK3582MFV-B
2SK3582MFV
2006-11-20
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK3582MFV
For ECM
Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD (Note)
150
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Mounted on FR4 board
IDSS CLASSIFICATION
A-Rank
80 to 200 A
B-Rank
170 to 300A
Marking
Equivalent Circuit
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1L1C
Weight: 1.5mg (typ.)
VESM
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank
Type Name
5
1.
0.
05
0.
32
±
0
.0
5
1
2
3
0.
4
0.
4
0.
22
±
0
.0
5
0.8±0.05
0.
0.
05
1.2±0.05
0
.5
±
0.
05
0.
13±
0.
05
0.5mm
0.45mm
0.4mm
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