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參數(shù)資料
| 型號： | 2SK3607-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SK3607-01MR |
1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200
VDSX *5
170
Continuous drain current
ID
±18
Pulsed drain current
ID(puls]
±72
Gate-source voltage
VGS
±30
Non-repetitive Avalanche current
IAS *2
18
Maximum Avalanche Energy
EAS *1
125.5
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
2.16
Tc=25°C
37
Operating and storage
Tch
+150
temperature range
Tstg
Isolation voltage
VISO *6
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3607-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
ID=6.5A
VGS=10V
ID=6.5A
VDS=25V
VCC=48V ID=6.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
3.378
58.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=100V
ID=13A
VGS=10V
L=620H Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
kVrms
200
3.0
5.0
25
250
10
100
131
170
5.5
11
770
1155
110
165
5
7.5
12
18
2.6
3.9
22
33
6.1
9.2
21
31.5
812
5
7.5
18
1.10
1.65
0.15
0.88
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
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=
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*4 VDS
200V
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www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V *6 t=60sec f=60Hz
200304
*1 L=620H, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
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