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參數(shù)資料
| 型號(hào)： | 2SK3625(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10S2B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 326K |
| 代理商： | 2SK3625(2-10S2B) |
2SK3625
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3625
Chopper Regulator DCDC Converter, and Motor Drive
Applications
Low drainsource ON resistance: RDS (ON) = 65 m (typ.)
High forward transfer admittance: |Yfs| = 10 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, RG = 25 ,
IAR = 25 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
200
V
Draingate voltage (RGS = 20 k)
VDGR
200
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
25
A
Drain current
Pulse (Note 1)
IDP
100
A
Drain power dissipation
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
488
mJ
Avalanche current
IAR
25
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
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