- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄50004 > 2SK363-GR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK363-GR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | 2-5F1D, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 694K |
| 代理商： | 2SK363-GR |
2SK363
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK363
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 40 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
5.0
30
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.3
1.2
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
25
60
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
75
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
15
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
20
Ω
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Condition of the typical value IDSS = 15 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK363 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK3636 | 3 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3653C | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3658 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK366-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK363-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3645-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3648-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK364-BL(F) | 制造商:Toshiba 功能描述:Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。