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參數(shù)資料
| 型號(hào)： | 2SK3634-Z |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 167K |
| 代理商： | 2SK3634-Z |
Data Sheet D15936EJ2V0DS
5
2SK3634
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
I
D
= 6 A
3 A
Pulsed
V
GS
= 10 V
1
10
100
1000
0.1
1
10
100
1000
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
R
D
T
ch
- Channel Temperature -
°
C
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
0.1
1
10
100
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 100 V
V
GS
= 10 V
R
G
= 0
V
D
0
20
40
60
80
100
120
140
160
180
200
220
240
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I
D
= 6.0 A
V
DS
V
DD
= 160 V
100 V
40 V
V
GS
V
G
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
V
GS
= 0 V
t
r
1
10
100
1000
0.1
1
10
100
V
GS
= 0 V
di/dt = 100 A/
μ
s
V
F(S-D)
- Source to Drain Voltage - V
I
F
– Diode Forward Current - A
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| 2SK3676-01S | STD LQg MOSFET |
| 2SK3678-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3634-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 6A 3-Pin(2+Tab) TO-252 |
| 2SK3635-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 |
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK363BL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK363-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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