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參數(shù)資料
| 型號： | 2SK3650-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 255K |
| 代理商： | 2SK3650-01L |
3
2SK3650-01L,S,SJ
FUJI POWER MOSFET
VGS=f(Qg):ID=23A, Tch=25°C
IF=f(VSD):80s Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
V
G
S(
th)
[V
]
Tch [
°C]
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
Qg [C]
Typical Gate Charge Characteristics
VGS
[V
]
72V
48V
Vcc= 36V
10
-1
10
0
10
1
10
2
10p
100p
1n
10n
C
[
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t[n
s]
0
25
50
75
100
125
150
0
100
200
300
400
500
I
AS
=14A
I
AS
=33A
I
AS
=20A
E
AS
[m
J]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3650-01SJ | 33 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK3653-A | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3651-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3653(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
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