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參數資料
| 型號： | 2SK3653J7 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 0814, SOF-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 2SK3653J7 |
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2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No.
D16293EJ1V0DS00 (1st edition)
Date Published
June 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3653 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000
S TYP. (IDSS = 100 A)
1600
S TYP. (IDSS = 200 A)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3653
3pinXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note1
VDSX
20
V
Gate to Drain Voltage
VGDO
–20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
Note2
PT
80
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
–55 to +125
°C
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
1.2
±0.1
MAX. 0.4
0.8
±0.1
D
0.9
1.4 ±0.1
G
S
0~0.05
0.13
+0.1
–0.05
0.2
+0.1
–0
EQUIVALENT CIRCUIT
Source
Gate
Drain
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
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