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參數(shù)資料
| 型號： | 2SK3663 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SK3663 |
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2003
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D16529EJ1V0DS00 (1st edition)
January 2003 NS CP(K)
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 0.57
MAX. (V
GS
= 4.5
V, I
D
= 0.30
A)
R
DS(on)2
= 0.60
MAX. (V
GS
= 4.0
V, I
D
= 0.30 A)
R
DS(on)3
= 0.88
MAX. (V
GS
= 2.5
V, I
D
= 0.15 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3663
SC-70 (SSP)
Remark
Marking : G26
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T
T
ch
T
stg
20
±12
±0.5
±2.0
0.2
150
V
V
A
A
W
°C
°C
Channel Temperature
Storage Temperature
55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 2500 mm
2
x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3664 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3668 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3668-ZK | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3705 | 2SK3705 |
| 2SK3712 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3663-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R Tape & Reel 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R |
| 2SK3664-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R |
| 2SK3666-2-TB-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3666-3-TB-E | 功能描述:JFET SWITCHING DEVICE RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3666-4-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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