參數(shù)資料
型號: 2SK3700
元件分類: JFETs
英文描述: 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁數(shù): 3/6頁
文件大小: 228K
代理商: 2SK3700
2SK3700
2009-09-29
3
RDS (ON) – ID
1
0.01
0.1
1
10
5
3
10
VGS = 10 V15V
Common source
Tc
= 25°C
VGS = 10 V
Pulse Test
Drain current ID (A)
Drain-
sou
rce
O
N
re
sis
tan
ce
R
DS
(ON)
(
Ω
)
Yfs – ID
0.1
1
10
0.1
1
10
25
100
Tc
= 55°C
Common source
VDS = 10 V
Pulse Test
Drain current ID (A)
Forward
transfer
ad
mitt
an
ce
Y
fs
(S
)
VDS – VGS
0
8
12
14
20
0
ID = 5 A
4
8
12
16
20
1.5
3
4
Common source
Tc
= 25°C
Pulse Test
Gate-source voltage VGS
(V)
Drain-
sou
rce
volt
ag
e
V
DS
(V)
ID – VGS
0
2
4
6
8
10
2
10
Tc
= 55°C
25
100
4
6
8
Common source
VDS = 10 V
Pulse Test
Gate-source voltage VGS
(V)
Drain
curren
t
I D
(A)
ID – VDS
5
4
3
2
1
0
6
0
10
20
30
VGS = 4 .5V
4.75
5
5.25
8
10
5.5
6
Common source
Tc
= 25°C
Pulse Test
Drain-source voltage VDS
(V)
Drain
curren
t
I
D
(
A
)
ID – VDS
5
4
2
1
0
4
8
12
16
20
VGS = 4.5 V
4.75
5
5.25
5.5
6
8
10
24
3
Common source
Tc
= 25°C
Pulse Test
Drain-source voltage VDS
(V)
Drain
curren
t
I
D
(
A
)
相關PDF資料
PDF描述
2SK3702 18 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ653 37 A, 60 V, 0.037 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1420 25 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1904 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ650 12 A, 60 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關代理商/技術參數(shù)
參數(shù)描述
2SK3700(F) 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3702 功能描述:MOSFET N-CH 60V 18A TO-220ML RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SK3703 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3703-1E 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS(導通):4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel
2SK3703-1EX 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES