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參數(shù)資料
| 型號： | 2SK3715 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, MP-45F, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SK3715 |
Data Sheet D16378EJ2V0DS
2
2SK3715
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 38 A
33
65
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 38 A
4.8
6.0
m
RDS(on)2
VGS = 4 V, ID = 38 A
6.1
9.5
m
Input Capacitance
Ciss
VDS = 10 V
8400
pF
Output Capacitance
Coss
VGS = 0 V
1200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
530
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 38 A
24
ns
Rise Time
tr
VGS = 10 V
15
ns
Turn-off Delay Time
td(off)
RG = 0
116
ns
Fall Time
tf
11
ns
Total Gate Charge
QG
VDD = 48 V
145
nC
Gate to Source Charge
QGS
VGS = 10 V
21
nC
Gate to Drain Charge
QGD
ID = 75 A
39
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 75 A, VGS = 0 V
0.92
1.5
V
Reverse Recovery Time
trr
IF = 50 A, VGS = 0 V
59
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
136
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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|---|---|
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