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參數(shù)資料
| 型號： | 2SK3719 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 116K |
| 代理商： | 2SK3719 |
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JUNCTION FIELD EFFECT TRANSISTOR
2SK3719
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D16787EJ2V0DS00 (2nd edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2003
The mark
shows major revised points.
DESCRIPTION
The 2SK3719 is suitable for converter of ECM.
FEATURES
High gain
0.5 dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Low noise
109 dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Super thin thickness package
t = 0.37 mm TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3719
3pXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
1.0 V)
V
DSX
20
V
Gate to Drain Voltage
V
GDO
20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°C
Storage Temperature
T
stg
55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
1
MAX. 0.4
0
1.4 ±0.1
0
to
0.05
0
.13
+0.1
0.2
+0.1
–0
0
2
0.45
0.45
3
1
(
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
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