參數(shù)資料
型號(hào)： 2SK3812
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 141K
代理商： 2SK3812
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 2.8 m
MAX. (V
GS
= 10
V, I
D
= 55
A)
R
DS(on)2
= 3.7 m
MAX. (V
GS
= 4.5
V, I
D
= 55
A)
High current rating: I
D(DC)
= ±110 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±110
A
I
D(pulse)
±440
A
Total Power Dissipation (T
C
= 25°C)
P
T1
213
W
Total Power Dissipation (T
A
= 25°C)
P
T2
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
T
stg
55 to +150
°C
E
AS
397
mJ
I
AR
63
A
E
AR
397
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
→
0 V, L = 100
μ
H
3.
T
ch(peak)
≤
150°C, R
G
= 25
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3812-ZP
TO-263 (MP-25ZP)
(TO-263)
相關(guān)PDF資料
PDF描述
2SK3812-ZP SWITCHING N-CHANNEL POWER MOSFET
2SK3814 SWITCHING N-CHANNEL POWER MOSFET
2SK3814-Z SWITCHING N-CHANNEL POWER MOSFET
2SK3822 General-Purpose Switching Device Applications
2SK3899-ZK SWITCHING N-CHANNEL POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3812-ZP-A E2 制造商:Renesas Electronics Corporation 功能描述:
2SK3812-ZP-E1-A 制造商:Renesas Electronics Corporation 功能描述:
2SK3812-ZP-E1-AY 功能描述:MOSFET N-CH 60V MP-25ZP/TO-263 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3812-ZP-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3813-AZ 功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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