型號: | 2SK3830 |
廠商: | Sanyo Electric Co.,Ltd. |
英文描述: | N CHANNEL MOS SILICON TRANSISTOR |
中文描述: | N通道馬鞍山硅晶體管 |
文件頁數(shù): | 3/4頁 |
文件大小: | 57K |
代理商: | 2SK3830 |
相關PDF資料 |
PDF描述 |
---|---|
2SK383 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
2SK3944 | 2SK3944 |
2SK398 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
2SK399 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-247VAR |
2SK4027 | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |