參數(shù)資料
型號: 2SK3891-01R
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: 17 A, 700 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/4頁
文件大小: 104K
代理商: 2SK3891-01R
3
2SK3891-01R
FUJI POWER MOSFET
-50
-25
0
255075
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS
(th)
[V]
Tch [
°C]
0
102030
40506070
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A,Tch=25
°C
V
G
S
[V]
560V
350V
Vcc= 140V
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
[
p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF
[
A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25°C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[n
s]
ID [A]
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
I
AS
=6.8A
I
AS
=10.2A
I
AS
=17A
EAV
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=100V
相關(guān)PDF資料
PDF描述
2SK4005-01MR 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4018 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4021 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
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