參數(shù)資料
型號(hào)： 2SK3974-01L
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： 1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-251, KPACK, IPAK-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 131K
代理商： 2SK3974-01L
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous drain current
ID
±1
Pulsed drain current
ID(puls]
±2
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
1
Non-Repetitive
Maximum Avalanche Energy
EAS
129
Repetitive
Maximum Avalanche Energy
3.0
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Maximum power dissipation
PD
1.04
30
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3974-01L,S FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V
VGS=0V
VGS=±30V
ID=0.5A
VGS=10V
ID=0.5A
VDS=25V
VCC=300V ID=0.5A
VGS=10V
RGS=10
V
A
nA
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
4.167
120
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=1A
VGS=10V
IF=1A VGS=0V Tch=25°C
IF=1A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
600
3.5
4.5
25
250
100
9.8
12.0
0.4
0.8
90
135
13
20
0.7
1.2
9.0
15.0
6.0
10.0
22
33
27
41
6.5
10.0
2.2
3.3
1.6
2.4
0.96
1.50
200
0.55
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
200509
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VGS=-30V
Note *1
Note *2
Note *3
VDS 600V
Note *4
Ta=25°C
Tc=25°C
See to P4
Min.
Typ.
Max.
Units
http://www.fujielectric.co.jp/fdt/scd/
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Note *1 Tch 150°C
Note *2 Starting Tch=25°C, IAS=0.4A, L=1480mH, VCC=60V, RG=50
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
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相關(guān)PDF資料
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2SK3984-ZK 18000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
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