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參數(shù)資料
| 型號(hào)： | 2SK4035 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIMOLD THIN, SC-96, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | 2SK4035 |
Data Sheet D17447EJ1V0DS
4
2SK4035
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
1
2
024
68
10
VGS = 10 V
Pulsed
VDS - Drain to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0.00001
0.0001
0.001
0.01
0.1
1
10
0
5
10
15
TA =
55°C
25°C
75°C
125°C
150°C
VDS = 10 V
Pulsed
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
0
1
2
3
4
5
6
7
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
T
ransfer
Admittan
ce
-
S
0.01
0.1
1
10
0.01
0.1
1
10
75°C
125°C
150°C
VDS = 10 V
Pulsed
TA =
55°C
25°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
0
1
2
3
4
5
6
7
8
0.01
0.1
1
10
VGS = 10 V
Pulsed
ID - Drain Current - A
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
ID = 0.25 A
Pulsed
VGS - Gate to Source Voltage - V
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| 2SK4057 | 30 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4035-A | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK4035-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK4035-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin SC-96 T/R |
| 2SK4037 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:470 MHz Band Amplifier Applications |
| 2SK4037(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH PW-X |
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