參數(shù)資料
型號: 2SK4070
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應管
文件頁數(shù): 7/8頁
文件大?。?/td> 211K
代理商: 2SK4070
Data Sheet D18785EJ2V0DS
7
2SK4070
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
2) TO-251 (MP-3-b)
6.6
±
0.2
5.3 TYP.
4.3 MIN.
Mold Area
2.3
±
0.1
0.5
±
0.1
0.76
±
0.1
0.5
±
0.1
No Plating
0
6
±
0
1
±
0
9
4
.
1
1
1
4
2
3
1.14 MAX.
2.3 TYP.
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.6±0.2
2.3±0.1
0.5±0.1
0.76±0.12
0.5±0.1
5.3 TYP.
2.3 TYP.
2.3 TYP.
1
1.14 MAX.
1
1
4
6
1
2
1
3
4
3) TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
6.5
±
0.2
5.1 TYP.
4.3 MIN.
2.3
±
0.1
0.5
±
0.1
0.76
±
0.12
0 to 0.25
0.5
±
0.1
1.0
No Plating
No Plating
1
6
±
0
0
4
.
0
1
1
4
2
3
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
Source
Drain
Gate
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
<R>
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